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SS3H9-M3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SS3H9-M3 Datasheet(HTML) 3 Page - Vishay Siliconix |
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SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor Revision: 09-Dec-13 3 Document Number: 89497 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C 10 20 30 40 50 60 70 8090 100 Percent of Rated Peak Reverse Voltage (%) 10 000 1000 100 10 1 0.1 0.01 T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C 0.1 1 10 100 Reverse Voltage (V) 1000 100 10 1 10 100 0.01 0.1 1 10 100 t - Pulse Duration (s) Cathode Band DO-214AB (SMC) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) Mounting Pad Layout 0.126 (3.20) MIN. 0.060 (1.52) MIN. 0.185 (4.69) MAX. 0.320 (8.13) REF. |
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