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NGTB30N120IHRWG Datasheet(PDF) 5 Page - ON Semiconductor |
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NGTB30N120IHRWG Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 10 page NGTB30N120IHRWG http://onsemi.com 5 TYPICAL CHARACTERISTICS Figure 13. Switching Loss vs. Rg Rg, GATE RESISTOR (W) 45 35 25 15 5 2.5 55 65 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A 75 85 Eoff VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A Figure 14. Switching Time vs. Rg Rg, GATE RESISTOR (W) 45 35 25 15 5 10000 55 65 75 85 tf td(off) Figure 15. Switching Loss vs. VCE VCE, COLLECTOR−EMITTER VOLTAGE (V) 450 400 350 300 250 500 700 750 800 550 600 650 IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W Eoff VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 Figure 16. Switching Time vs. VCE IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W td(off) tf Figure 17. Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 100 10 1 0.01 0.1 1 10 100 1000 50 ms 100 ms 1 ms dc operation Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature Figure 18. Reverse Bias Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 100 10 1 1 10 100 1000 VGE = 15 V, TC = 125°C 1000 100 10 100 10 2 1.5 1 0.5 0 2.5 2 1.5 1 0.5 0 450 400 350 300 250 500 700 750 800 550 600 650 |
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