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NGTB30N120IHRWG Datasheet(PDF) 5 Page - ON Semiconductor

Part # NGTB30N120IHRWG
Description  IGBT with Monolithic Free Wheeling Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NGTB30N120IHRWG Datasheet(HTML) 5 Page - ON Semiconductor

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NGTB30N120IHRWG
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TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
45
35
25
15
5
2.5
55
65
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
75
85
Eoff
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
45
35
25
15
5
10000
55
65
75
85
tf
td(off)
Figure 15. Switching Loss vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
450
400
350
300
250
500
700 750 800
550 600 650
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eoff
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
Figure 16. Switching Time vs. VCE
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
tf
Figure 17. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
100
10
1
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
100
10
1
1
10
100
1000
VGE = 15 V, TC = 125°C
1000
100
10
100
10
2
1.5
1
0.5
0
2.5
2
1.5
1
0.5
0
450
400
350
300
250
500
700 750 800
550 600 650


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