SD101AWS-G, SD101BWS-G, SD101CWS-G

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Vishay Semiconductors

Rev. 1.2, 14-Oct-16

2

Document Number: 85162

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage

Fig. 2 - Typical Forward Conduction Curve

Fig. 3 - Typical Variation of Reverse Current at Various

Temperatures

Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

SD101AWS-G

60

V

SD101BWS-G

50

V

SD101CWS-G

40

V

Leakage current

SD101AWS-G

200

nA

SD101BWS-G

200

nA

SD101CWS-G

200

nA

Forward voltage drop

SD101AWS-G

410

mV

SD101BWS-G

400

mV

SD101CWS-G

390

mV

SD101AWS-G

1000

mV

SD101BWS-G

950

mV

SD101CWS-G

900

mV

Junction capacitance

SD101AWS-G

2.0

ns

SD101BWS-G

2.1

ns

SD101CWS-G

2.2

ns

Reverse recovery time

1ns

0.01

0.1

1

10

0

0.4

0.6

0.8

1.0

0.2

A

B

C

18477

A

B

C

0

0.4

0.6

0.8

1.0

0.2

60

20

80

40

0

100

18478

100

10

1

0.1

0.01

10

20

30

40

050

75 °C

50 °C

25 °C

125 °C

100 °C

18479

18480

10

20

30

40

0

0

1.0

1.2

1.4

1.6

1.8

2.0

0.6

0.8

0.2

0.4

50

C

B

A