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S1AFM Datasheet(PDF) 1 Page - Vishay Siliconix |
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S1AFM Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page S1AFG, S1AFJ, S1AFK, S1AFM www.vishay.com Vishay General Semiconductor Revision: 21-Jan-15 1 Document Number: 87739 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, and industrial applications MECHANICAL DATA Case: DO-221AC (SlimSMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Notes (1) Free air, mounted on recommended copper pad area Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 400 V, 600 V, 800 V, 1000 V IFSM 35 A IR 5 μA VF at IF = 1.0 A (125 °C) 0.85 V TJ max. 150 °C Package DO-221AC (SlimSMA) Diode variations Single die DO-221AC TMBS® SlimSMATM Top View Bottom View MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S1AFG S1AFJ S1AFK S1AFM UNIT Device marking code SG SJ SK SM Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V Maximum average forward rectified current IF(AV) (1) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 35 A Operating junction and storage temperature range TJ, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage IF = 0.5 A TA = 25 °C VF (1) 0.90 - V IF = 1.0 A 0.95 1.1 IF = 0.5 A TA = 125 °C 0.78 - IF = 1.0 A 0.85 0.98 Max. reverse current Rated VR TA = 25 °C IR (2) -5.0 μA TA = 125 °C - 100 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.47 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 7.9 - pF |
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