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NGTD30T120F2SWK Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTD30T120F2SWK Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page NGTD30T120F2 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units STATIC CHARACTERISTICS Collector−Emitter Breakdown Voltage VGE = 0 V, IC = 500 mA V(BR)CES 1200 V Collector−Emitter Saturation Voltage VGE = 15 V, IC = 40 A VCE(sat) 2.0 2.4 V Gate−Emitter Threshold Voltage VGE = VCE, IC = 400 mA VGE(TH) 4.5 5.5 6.5 V Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1200 V ICES 0.4 mA Gate Leakage Current VGE = 20 V, VCE = 0 V IGES 200 nA DYNAMIC CHARACTERISTICS Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies 7385 pF Output Capacitance Coes 230 pF Reverse Transfer Capacitance Cres 140 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DIE LAYOUT E = Emitter pad G = Gate pad All dimensions in mm E E G |
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