NGTD30T120F2SWK datasheet(2/3 Pages) ONSEMI

Part #	NGTD30T120F2SWK

Description	IGBT Die

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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NGTD30T120F2

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ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Units

STATIC CHARACTERISTICS

Collector−Emitter Breakdown Voltage

VGE = 0 V, IC = 500 mA

V(BR)CES

1200

V

Collector−Emitter Saturation Voltage

VGE = 15 V, IC = 40 A

VCE(sat)

2.0

2.4

V

Gate−Emitter Threshold Voltage

VGE = VCE, IC = 400 mA

VGE(TH)

4.5

5.5

6.5

V

Collector−Emitter Cutoff Current

VGE = 0 V, VCE = 1200 V

ICES

0.4

mA

Gate Leakage Current

VGE = 20 V, VCE = 0 V

IGES

200

nA

DYNAMIC CHARACTERISTICS

Input Capacitance

VCE = 20 V, VGE = 0 V, f = 1

MHz

Cies

7385

pF

Output Capacitance

Coes

230

pF

Reverse Transfer Capacitance

Cres

140

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

DIE LAYOUT

E = Emitter pad

G = Gate pad

All dimensions in

mm

E

G

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NGTD30T120F2SWK Datasheet(PDF) 2 Page - ON Semiconductor

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