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NGTD21T65F2 Datasheet(PDF) 1 Page - ON Semiconductor |
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NGTD21T65F2 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 0 1 Publication Order Number: NGTD21T65F2WP/D NGTD21T65F2 IGBT Die Trench Field Stop II IGBT Die for motor drive and inverter applications. Features • Extremely Efficient Trench with Field Stop Technology • Low VCE(sat) Loss Reduces System Power Dissipation Typical Applications • Industrial Motor Drives • Solar Inverters • UPS Systems • Welding MAXIMUM RATINGS Parameter Symbol Value Unit Collector−Emitter Voltage, TJ =25°C VCE 650 V DC Collector Current, limited by TJ(max) IC (Note 1) A Pulsed Collector Current (Note 2) IC, pulse 200 A Gate−Emitter Voltage VGE ±20 V Maximum Junction Temperature TJ −55 to +175 °C Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C TSC 5.0 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Depending on thermal properties of assembly. 2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V. MECHANICAL DATA Parameter Value Unit Die Size 4451 x 4451 mm2 Emitter Pad Size See die layout mm2 Gate Pad Size 410 x 570 mm2 Die Thickness 3 mils Wafer Size 150 mm Top Metal 4 mm AISI Back Metal 2 mm TiNiAg Max possible chips per wafer 630 Passivation frontside Oxide−Nitride Reject ink dot size 25 mils Recommended storage environment: In original container, in dry nitrogen, or temperature of 18−28 °C, 30−65%RH Type: Bare Wafer in Jar Storage time: < 36 months Type: Die on tape in ring−pack Storage time: < 3 months ORDERING INFORMATION Device Inking? Shipping NGTD21T65F2WP Yes Bare Wafer in Jar NGTD21T65F2SWK Yes Sawn Wafer on Tape www.onsemi.com DIE OUTLINE VRCE = 650 V IC = Limited by TJ(max) IGBT DIE G C E |
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