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NGTB50N65FL2WG Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTB50N65FL2WG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 11 page  NGTB50N65FL2WG www.onsemi.com 2 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT RqJC 0.36 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.60 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat 1.50 − 1.80 2.19 2.00 − V Gate−emitter threshold voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 150°C ICES − − − − 0.5 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 5328 − pF Output capacitance Coes − 252 − Reverse transfer capacitance Cres − 148 − Gate charge total VCE = 480 V, IC = 50 A, VGE = 15 V Qg − 220 − nC Gate to emitter charge Qge − 52 − Gate to collector charge Qgc − 116 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V td(on) − 100 − ns Rise time tr − 47 − Turn−off delay time td(off) − 237 − Fall time tf − 67 − Turn−on switching loss Eon − 1.50 − mJ Turn−off switching loss Eoff − 0.46 − Total switching loss Ets − 1.96 − Turn−on delay time TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V td(on) − 90 − ns Rise time tr − 49 − Turn−off delay time td(off) − 245 − Fall time tf − 96 − Turn−on switching loss Eon − 1.90 − mJ Turn−off switching loss Eoff − 0.83 − Total switching loss Ets − 2.73 − DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − − 2.10 2.20 2.90 − V Reverse recovery time TJ = 25°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms trr − 94 − ns Reverse recovery charge Qrr − 0.45 − mC Reverse recovery current Irrm − 8 − A Reverse recovery time TJ = 175°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms trr − 170 − ns Reverse recovery charge Qrr − 1.40 − mC Reverse recovery current Irrm − 13 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Similar Part No. - NGTB50N65FL2WG_16 |
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Similar Description - NGTB50N65FL2WG_16 |
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