VS-1N3879(R), VS-1N3889(R) Series

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Vishay Semiconductors

Revision: 28-May-15

3

Document Number: 93144

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Note

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

1N3879(R)

TO 1N3883(R)

1N3889(R)

TO 1N3893(R)

UNITS

Maximum reverse

recovery time

150

150

ns

Maximum peak



recovery current

-

Maximum reverse

recovery charge

400

350

nC

400

400

I

FM

t

rr

dir

dt

I

RM(REC)

Q

rr

t

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

1N3879(R)

TO 1N3883(R)

1N3889(R)

TO 1N3893(R)

UNITS

Maximum junction operating



temperature range

-65 to +150

°C

Maximum storage temperature range

-65 to +175

Maximum thermal resistance,



junction to case

DC operation

2.5

2.0

°C/W

Maximum thermal resistance,



case to heatsink

Mounting surface, smooth,



flat and greased

0.5

Allowable mounting torque

Not lubricated threads

(13)

N · m

(lbf · in)

Lubricated threads

(10)

Approximate weight

7g

0.25

oz.

Case style

DO-203AA (DO-4)

R

CONDUCTION ANGLE

1N3879(R)

TO 1N3883(R)

1N3889(R)

TO 1N3893(R)

1N3879(R)

TO 1N3883(R)

1N3889(R)

TO 1N3893(R)

TEST CONDITIONS

UNITS

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

180°

0.58

0.46

0.33

0.26

K/W

120°

0.60

0.48

0.58

0.46

60°

1.28

1.02

1.28

1.02

30°

2.20

1.76

2.20

1.76