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IS31LT3350-V1SDLS2-TR Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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IS31LT3350-V1SDLS2-TR Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
5 / 12 page IS31LT3350 Integrated Silicon Solution, Inc. – www.issi.com Rev. A, 10/18/2011 5 ELECTRICAL CHARACTERISTICS (CONTINUED) (VIN=12V, TA=25°C unless otherwise stated) (NOTE 2) Symbol Parameter Conditions Min. Typ. Max. Unit ILX(leak) LX switch leakage current 1 μA RLX LX Switch ‘On’ resistance 0.9 1.5 Ω DPWM(LF) Brightness control range at low frequency PWM signal PWM frequency =100Hz PWM amplitude=5V,Vin=15V, L=27uH, Driving 1 LED 1200:1 DPWM(HF) Brightness control range at low frequency PWM signal PWM frequency =10KHz PWM amplitude=5V,Vin=15V, L=27uH, Driving 1 LED 13:1 fLX Operating frequency ADJ pin floating L=100μH (0.82Ω) IOUT=350mA @ VLED=3.4V Driving 1 LED 154 KHz TONmin Minimum switch ‘ON’ time LX switch ‘ON’ 200 ns TOFFmin Minimum switch ‘OFF’ time LX switch ‘OFF’ 200 ns fLXmax Recommended maximum operating frequency 1 MHz DLX Recommended duty cycle range of output switch at fLXmax 0.3 0.7 0.9 TPD Internal comparator propagation delay 50 ns TSD Thermal shutdown temperature 140 °C TSD-HYS Thermal shutdown hysteresis 20 °C NOTES: 1. Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. All parts are production tested at TA=25°C. Other temperature limits are guaranteed by design. |
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