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BAL99-G3-08 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAL99-G3-08 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page BAL99-G www.vishay.com Vishay Semiconductors Rev. 1.0, 15-May-13 1 Document Number: 85417 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes/options: 18/10K per 13 " reel (8 mm tape), 10K/box 08/3K per 7 " reel (8 mm tape), 15K/box FEATURES • Fast switching speed • Surface mount package • Well suited for automated assembly process • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 12 3 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAL99-G BAL99-G3-08 or BAL99-G3-18 Single diode JG Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage = DC blocking voltage VRRM = VRWM = VR 70 V Peak forward surge current tp = 1 μs IFSM 2A tp = 1 ms IFSM 1A tp = 1 s IFSM 0.5 A Average forward current IFAV 250 mA Power dissipation On fiberglass substrate 30 mm x 10 mm x 1.6 mm Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air On fiberglass substrate 30 mm x 10 mm x 1.6 mm RthJA 357 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Top - 55 to + 150 °C |
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