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1N4448WS-G3-08 Datasheet(PDF) 3 Page - Vishay Siliconix |
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1N4448WS-G3-08 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page 1N4448WS-G www.vishay.com Vishay Semiconductors Rev. 1.2, 14-Oct-16 3 Document Number: 85414 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration PACKAGE DIMENSIONS in millimeters (inches): SOD-323 17442 t P (s) 100 1 3 5 10-5 10-4 10-3 10 10-1 10-2 25 2 5 25 2 5 25 25 2 4 10 3 5 2 4 1 3 5 2 4 0.1 I I FRM T n = t P/T T = 1/f P t t P n = 0 0.1 0.2 0.5 Rev. 6 - Date: 23.Sept.2016 17443 Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Footprint recommendation: 2.50 [0.098] 2.85 [0.112] 1.60 [0.063] 1.95 [0.077] 0.25 [0.010] 0.40 [0.016] Cathode bar 1.6 [0.063] 0.8 [0.031] 0.8 [0.031] |
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