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BAT54AW Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAT54AW Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Surface Mount Schottky Barrier Diode BAT54W/AW/CW/SW F019 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 100μA 30 V Reverse voltage leakage current IR VR=25V 2.0 μA Forward voltage VF IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA 240 320 400 500 1000 mV Diode capacitance CD VR=1V f=1MHz 10 pF Reverse recovery time trr IF=IR=10mA RL=100Ω 5 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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