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LM2335 Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM2335 Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 22 page Electrical Characteristics (Continued) V CC = 5.0V, VP = 5.0V; TA = 25˚C, except as specified Symbol Parameter Conditions Value Units Min Typ Max t CS Data to Clock Set Up Time See Data Input Timing 50 ns t CH Data to Clock Hold Time See Data Input Timing 10 ns t CWH Clock Pulse Width High See Data Input Timing 50 ns t CWL Clock Pulse Width Low See Data Input Timing 50 ns t ES Clock to Load Enable Set Up Time See Data Input Timing 50 ns t EW Load Enable Pulse Width See Data Input Timing 50 ns Note 3: See PROGRAMMABLE MODES for ICPo description. Note 4: Clock, Data and LE does not include fIN1, fIN2 and OSCin. Charge Pump Current Specification Definitions DS012807-18 I1 = CP sink current at VDo = VP − ∆V I2 = CP sink current at VDo = VP/2 I3 = CP sink current at VDo = ∆V I4 = CP source current at VDo = VP − ∆V I5 = CP source current at VDo = VP/2 I6 = CP source current at VDo = ∆V V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V. 1. IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage = [1⁄2 * {|I1| − |I3|}]/[1⁄2 * {|I1| + |I3|}] * 100% and [1⁄2 * {|I4| − |I6|}]/[1⁄2 * {|I4| + |I6|}] * 100% 2. IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch = [|I2| − |I5|]/[1⁄2 * {|I2| + |I5|}] * 100% 3. IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature = [|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100% and [|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100% www.national.com 6 |
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