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SI4825DY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4825DY
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4825DY Datasheet(HTML) 1 Page - Vishay Siliconix

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Si4825DY
Vishay Siliconix
New Product
Document Number: 71291
S-10679—Rev. A, 31-Jul-00
www.vishay.com
S FaxBack 408-970-5600
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
–30
0.014 @ VGS = –10 V
–11.5
–30
0.022 @ VGS = –4.5 V
–9.2
SD
S
D
SD
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
SS S
G
D
D
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
–30
V
Gate-Source Voltage
VGS
"25
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
–11.5
–8.1
A
Continuous Drain Current (TJ = 150 C)a
TA = 70_C
ID
–9.2
–6.5
A
Pulsed Drain Current
IDM
–50
A
continuous Source Current (Diode Conduction)a
IS
–2.5
–1.3
Maximum Power Dissipationa
TA = 25_C
PD
3.0
1.5
W
Maximum Power Dissipationa
TA = 70_C
PD
1.9
0.9
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
v 10 sec
RthJA
32
42
_C/W
Maximum Junction-to-Ambienta
Steady State
RthJA
68
85
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
15
18
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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