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MCR72-3 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MCR72-3
Description  SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR72-3 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
MCR72/D
MCR72-3, MCR72-6,
MCR72-8
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability
Small, Rugged Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 µA Maximum for Direct Driving from
Integrated Circuits
Device Marking: Logo, Device Type, e.g., MCR72–3, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage(1)
(TJ = *40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR72–3
MCR72–6
MCR72–8
VDRM,
VRRM
100
400
600
Volts
On-State RMS Current
(180
° Conduction Angles; TC = 83°C)
IT(RMS)
8.0
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = 110°C)
ITSM
100
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Voltage
(t
≤ 10 µs, TC = 83°C)
VGM
"5.0
Volts
Forward Peak Gate Current
(t
≤ 10 µs, TC = 83°C)
IGM
1.0
Amp
Forward Peak Gate Power
(t
≤ 10 µs, TC = 83°C)
PGM
5.0
Watts
Average Gate Power
(t = 8.3 ms, TC = 83°C)
PG(AV)
0.75
Watt
Operating Junction Temperature Range
TJ
– 40 to
+110
°C
Storage Temperature Range
Tstg
– 40 to
+150
°C
Mounting Torque
8.0
in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
8 AMPERES RMS
100 thru 600 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MCR72–3
TO220AB
500/Box
http://onsemi.com
K
G
A
TO–220AB
CASE 221A
STYLE 3
1
2
3
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
MCR72–6
TO220AB
500/Box
MCR72–8
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.


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