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K2500G Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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K2500G Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page +I -V +V IT IH IS IBO IDRM VT VDRM VS VBO RS (VBO -VS) ( IS-IBO) RS SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS MaximumRated Value at Specified Junction Temperature BLOCKING CAPABILITY MAY BE LOST DURING ANDIMMEDIATELY FOLLOWINGSURGE CURRENT INTERVAL OVERLOADMAY NOT BE REPEATED UNTIL JUNCTIONTEMPERATURE HAS RETURNED TOSTEADY-STATE RATED VALUE. 1.0 10 1000 100 1.0 2.0 40 100 4.0 10 8.0 6.0 20 Surge Current Duration - Full Cycles www.galaxycn.com BLGALAXY ELECTRICAL Document Number 029000 1 2. (9) For best Sidac operation, the load impedance should be near or less than sw itching resistance. R S — Sw itching resistance R S= 50/60 Hz sine w ave (V BO-VS) ◇ All measurements are made at 60Hz w ith a resistive load at an of this catalog. ◇ Junction temperature range (TJ) is -40°C to +125°C. ◇ Lead solder temperature is a maximum of +230°C for 10 seconds ambient temperature of +25°C unless otherw ise specified. V DRM — Repetitive peak off-state voltage (I S-IBO) V BO — Breakover voltage 50/60 Hz sine w ave maximum; ≥ 1/16" (1.59mm) fromcase. ◇ Storage temperature range (TS) is -65°C to +150°C. ◇ The case (TC) or lead (TL) temperature is measured as show n on the dimensional outline draw ings. See “Package Dimensions” section V TM — Peak on-state voltage, IT = 1 Amp General Notes I DRM — Repetitive peak off-state current 50/60 Hz sine w ave; V = VDRM (5) See Figure 9.1 for more than one full cycle rating. I H — Dynamic holding current 50/60 Hz sine w ave; R = 100Ω (6) R θJA Type 41 is 70° C/W. I T(RMS) — On-state RMS current TJ ≤ 125°C 50/60 Hz sine w ave (7) T L ≤ 100°C I TSM — Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive) (8) See Figure 9.14 for clarification of Sidac operation. Specific Test Conditions Electrical Specification Notes di/dt — Critical rate-of-rise of on-state current (1) See Figure 9.5 for V BO change vs junction temperature. 100°C (3) See Figure 9.2 for I H vs case temperature. I BO — Breakover current 50/60 Hz sine w ave (4) See Figure 9.13 for test circuit. (2) See Figure 9.6 for IBO vs junction temperature. dv/dt — Critical rate-of-rise of off-state voltage at rated V DRM; TJ ≤ RATINGS AND CHARACTERISTIC CURVES KG --- SERIES V-I CHARACTERISTICS FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT FFFFFFFF DURATION |
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