© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 8

1

Publication Order Number:

MMBD914LT1/D

MMBD914LT1G,

SMMBD914LT1G,

MMBD914LT3G,

SMMBD914LT3G

High-Speed Switching

Diode

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

100

Vdc

Forward Current

200

mAdc

Peak Forward Surge Current

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

FR− 5 Board (Note 1)

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2)

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

Package

ORDERING INFORMATION

SOT−23

CASE 318

STYLE 8

MARKING DIAGRAM

1

ANODE

3

CATHODE

MMBD914LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBD914LT3G

SOT−23

(Pb−Free)

10,000 /

Tape & Reel

1

5D M

G

G

5D

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

SMMBD914LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SMMBD914LT3G

SOT−23

(Pb−Free)

10,000 /

Tape & Reel

www.onsemi.com