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LMX2335L Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2335L
Description  PLLatinum™ Low Power Dual Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2335L Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
V
CC = 5.0V, VP = 5.0V; TA = 25˚C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
t
CS
Data to Clock Set Up Time
See Data Input Timing
50
ns
t
CH
Data to Clock Hold Time
See Data Input Timing
10
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Load Enable Set Up Time
See Data Input Timing
50
ns
t
EW
Load Enable Pulse Width
See Data Input Timing
50
ns
Note 3: See PROGRAMMABLE MODES for ICPo description.
Note 4: Clock, Data and LE does not include fIN1, fIN2 and OSCin.
Charge Pump Current Specification Definitions
DS012807-18
I1 = CP sink current at VDo = VP − ∆V
I2 = CP sink current at VDo = VP/2
I3 = CP sink current at VDo = ∆V
I4 = CP source current at VDo = VP − ∆V
I5 = CP source current at VDo = VP/2
I6 = CP source current at VDo = ∆V
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V.
1. IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage =
[12 * {|I1| − |I3|}]/[12 * {|I1| + |I3|}] * 100%
and
[12 * {|I4| − |I6|}]/[12 * {|I4| + |I6|}] * 100%
2. IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch =
[|I2| − |I5|]/[12 * {|I2| + |I5|}] * 100%
3. IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature =
[|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100%
and
[|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100%
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