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LMX2335L Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2335L
Description  PLLatinum™ Low Power Dual Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX2335L Datasheet(HTML) 5 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
−0.3V to +6.5V
V
P
−0.3V to +6.5V
Voltage on Any Pin
with GND = 0V (V
I)
−0.3V to V
CC +0.3V
Storage Temperature Range (T
S)
−65˚C to +150˚C
Lead Temperature (solder 4 sec.) (T
L)
+260˚C
Recommended Operating
Conditions
Power Supply Voltage
V
CC
2.7V to 5.5V
V
P
V
CC to +5.5V
Operating Temperature (T
A)
−40˚C to +85˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating <2 keV and is ESD sensitive. Handling and assembly of this device
should only be done at ESD protected work stations.
Electrical Characteristics
V
CC = 5.0V, VP = 5.0V; TA = 25˚C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
CC
Power Supply
LMX2335L
V
CC = 2.7V to 5.5V
4.0
5.2
mA
Current
RF1 and RF2
I
CC
LMX2335L RF1 only
2.0
2.6
mA
I
CC
LMX2336L
5.5
7
mA
RF1 and RF2
LMX2336L RF1 only
3.3
4.3
mA
f
IN 1
Operating
Frequency
LMX2335L
0.100
1.1
GHz
f
IN 2
0.050
1.1
GHz
f
IN1
LMX2336L
0.200
2.0
GHz
f
IN2
0.050
1.1
GHz
I
CC-PWDN
Powerdown Current
LMX2335L/2336L
V
CC = 5.5V
1
10
µA
f
OSC
Oscillator Frequency
With resonator load on OSC
out
5
20
MHz
f
OSC
No load on OSC
out
5
40
MHz
fφ
Maximum Phase Detector Frequency
10
MHz
Pf
IN
RF Input Sensitivity
V
CC = 3.0V, f > 100 MHz
−15
0
dBm
Pf
IN
V
CC = 5.0V, f > 100 MHz
−10
0
V
OSC
Oscillator Sensitivity
OSC
in
0.5
V
PP
V
IH
High-Level Input Voltage
(Note 4)
0.8 V
CC
V
V
IL
Low-Level Input Voltage
(Note 4)
0.2 V
CC
V
I
IH
High-Level Input Current
V
IH = VCC = 5.5V (Note 4)
−1.0
1.0
µA
I
IL
Low-Level Input Current
V
IL = 0V, VCC = 5.5V (Note 4)
−1.0
1.0
µA
I
IH
Oscillator Input Current
V
IH = VCC = 5.5V
100
µA
I
IL
Oscillator Input Current
V
IL = 0V, VCC = 5.5V
−100
µA
I
Do-SOURCE
Charge Pump Output Current
V
Do = VP/2, ICPo = LOW
(Note 3)
−1.25
mA
I
Do-SINK
V
Do = VP/2, ICPo = LOW
(Note 3)
1.25
mA
I
Do-SOURCE
V
Do = VP/2, ICPo = HIGH
(Note 3)
−4.25
mA
I
Do-SINK
V
Do = VP/2, ICPo = HIGH
(Note 3)
4.25
mA
I
Do-TRI
Charge Pump
0.5V
≤ V
Do ≤ VCC − 0.5V
−5.0
5.0
nA
TRI-STATE Current
T = 25˚C
V
OH
High-Level Output Voltage
I
OH = −500 µA
V
CC
0.4
V
V
OL
Low-Level Output Voltage
I
OL = 500 µA
0.4
V
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