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LMX2335 Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2335
Description  PLLatinum™ Dual Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2335 Datasheet(HTML) 5 Page - National Semiconductor (TI)

 
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Electrical Characteristics (Continued)
V
CC = 5.0V, Vp = 5.0V; TA = 25˚C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
Do-TRI
Charge Pump
TRI-STATE
CURRENT
LMX2335
LMX2336
0.5V
≤ V
Do ≤ Vp − 0.5V
T = 25˚C
−5.0
5.0
nA
I
Do-TRI
Charge Pump
TRI-STATE
CURRENT
LMX2337
0.5V
≤ V
Do ≤ Vp − 0.5V
T = 25˚C
±5nA
V
OH
High-Level Output Voltage
I
OH = −500 µA
V
CC
0.4
V
V
OL
Low-Level Output Voltage
I
OL = 500 µA
0.4
V
t
CS
Data to Clock Setup Time
See Data Input Timing
50
ns
I
CH
Data to Clock Hold Time
See Data Input Timing
10
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Load Enable Set Up Time
See Data Input Timing
50
ns
t
EW
Load Enable Pulse Width
See Data Input Timing
50
ns
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which
the device is intended to be functional, but do not guarantee specific performanced limits. For guaranteed specifications and test conditions, see the Electrical Char-
acteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD rating <2 keV and is ESD sensitive. Handling and assembly of this device should only
be done at ESD protected workstations.
Note 3: See PROGRAMMABLE MODES for ICPo description.
Note 4: Clock, Data and LE does not include fIN1, fIN2 and OSCin.
Typical Performance Characteristics
ICC vs V
CC
LMX2335/37
DS012332-19
I
CC vs VCC
LMX2336
DS012332-20
www.national.com
5


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