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LMX2335 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LMX2335 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 18 page 
Electrical Characteristics (Continued) V CC = 5.0V, Vp = 5.0V; TA = 25˚C, except as specified Symbol Parameter Conditions Value Units Min Typ Max I Do-TRI Charge Pump TRI-STATE CURRENT LMX2335 LMX2336 0.5V ≤ V Do ≤ Vp − 0.5V T = 25˚C −5.0 5.0 nA I Do-TRI Charge Pump TRI-STATE CURRENT LMX2337 0.5V ≤ V Do ≤ Vp − 0.5V T = 25˚C ±5nA V OH High-Level Output Voltage I OH = −500 µA V CC − 0.4 V V OL Low-Level Output Voltage I OL = 500 µA 0.4 V t CS Data to Clock Setup Time See Data Input Timing 50 ns I CH Data to Clock Hold Time See Data Input Timing 10 ns t CWH Clock Pulse Width High See Data Input Timing 50 ns t CWL Clock Pulse Width Low See Data Input Timing 50 ns t ES Clock to Load Enable Set Up Time See Data Input Timing 50 ns t EW Load Enable Pulse Width See Data Input Timing 50 ns Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but do not guarantee specific performanced limits. For guaranteed specifications and test conditions, see the Electrical Char- acteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: This device is a high performance RF integrated circuit with an ESD rating <2 keV and is ESD sensitive. Handling and assembly of this device should only be done at ESD protected workstations. Note 3: See PROGRAMMABLE MODES for ICPo description. Note 4: Clock, Data and LE does not include fIN1, fIN2 and OSCin. Typical Performance Characteristics ICC vs V CC LMX2335/37 DS012332-19 I CC vs VCC LMX2336 DS012332-20 www.national.com 5 |
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