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LMX2330A Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2330A
Description  PLLatinum™ Dual Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2330A Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Charge Pump Current Specification Definitions
RF Sensitivity Test Block Diagram
DS012331-25
I1 = CP sink current at VDo = VP − ∆V
I2 = CP sink current at VDo = VP/2
I3 = CP sink current at VDo = ∆V
I4 = CP source current at VDo = VP − ∆V
I5 = CP source current at VDo = VP/2
I6 = CP source current at VDo = ∆V
∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V.
3. IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage =
[12 * {|I1| − |I3|}]/[12 * {|I1| + |I3|}] * 100%
and
[12 * {|I4| − |I6|}]/[12 * {|I4| + |I6|}] * 100%
4. IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch =
[|I2| − |I5|]/[12 * {|I2| + |I5|}] * 100%
5. IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature =
[|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100%
and
[|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100%
DS012331-28
Note: N = 10,000 R = 50 P = 64
Note: Sensitivity limit is reached when the error of the divided RF output, FoLD, is ≥ 1 Hz.
www.national.com
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