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LMX2324 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2324
Description  PLLatinum™ 2.0 GHz Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2324 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage (V
CC)
−0.3V to 6.5V
Power Supply for Charge Pump (V
P)VCC to 6.5V
Voltage on Any Pin with
GND = 0V (V
I)
−0.3V to V
CC + 0.3V
Storage Temperature Range (T
S)
−65˚C to +150˚C
Lead Temperature (solder, 4 sec.) (T
L)
+260˚C
ESD - Human Body Model (Note 2)
2 kV
Recommended Operating
Conditions (Note 1)
Power Supply Voltage (V
CC)
2.7V to 5.5V
Power Supply for Charge Pump (V
P)VCC to 5.5V
Operating Temperature (T
A)
−40˚C to +85˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics.
Note 2: This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should on be done on ESD
protected workstations.
Electrical Characteristics (V
CC = 3V, VP = 3V; −40˚C < TA < 85˚C except as specified).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
GENERAL
I
CC
Power Supply Current
V
CC = 2.7V to 5.5V
3.5
mA
I
CC-PWDN
Power Down Current
10
µA
f
IN
f
IN Operating Frequency
0.1
2.0
GHz
OSC
in
Oscillator Operating Frequency
5
40
MHz
f
PD
Phase Detector Frequency
10
MHz
Pf
IN
Input Sensitivity f
INB grounded
through a 10 pF capacitor
V
CC = 3.0V
−15
0
dBm
V
CC = 5.0V
−10
0
V
OSC
Oscillator Sensitivity
0.4
1.0
V
CC−0.3
V
PP
CHARGE PUMP
ICP
o-source
Charge Pump Output Current
VCP
o =VP/2
−4.0
mA
ICP
o-sink
4.0
mA
ICP
o-Tri
Charge Pump TRI-STATE
Current
0.5
≤ VCP
o ≤ VP - 0.5
T = 25˚C
0.1
nA
ICP
o vs.
VCP
o
Charge Pump Output Current
Variation vs. Voltage (Note 4)
0.5
≤ VCP
o ≤ VP - 0.5
T = 25˚C
10
%
ICP
o-sink vs.
ICP
o-source
Charge Pump Output Current
Sink vs. Source Mismatch
(Note 4)
VCP
o =VP/2
T = 25˚C
5
%
ICP
o vs. T
Charge Pump Output Current
Magnitude Variation vs.
Temperature (Note 4)
VCP
o =VP/2
−40˚C
≤ T ≤ +85˚C
10
%
DIGITAL INTERFACE (DATA, CLK, LE, CE)
V
IH
High-Level Input Voltage
(Note 3)
0.8 V
CC
V
V
IL
Low-Level Input Voltage
(Note 3)
0.2 V
CC
V
I
IH
High-Level Input Current
V
IH =VCC = 5.5V
−1.0
1.0
µA
I
IL
Low-Level Input Current
V
IL =0,VCC = 5.5V
−1.0
1.0
µA
I
IH
Oscillator Input Current
V
IH =VCC = 5.5V
100
µA
I
IL
V
IL =0,VCC = 5.5V
−100
µA
MICROWIRE TIMING
t
CS
Data to Clock Set Up Time
See Data Input Timing
50
ns
t
CH
Data to Clock Hold Time
See Data Input Timing
10
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Enable Set Up Time
See Data Input Timing
50
ns
t
EW
Enable Pulse Width
See Data Input Timing
50
ns
Note 3: Except fIN and OSCin
Note 4: See related equations in charge pump current specification definitions
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