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MJ3281A Datasheet(PDF) 1 Page - Motorola, Inc |
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MJ3281A Datasheet(HTML) 1 Page - Motorola, Inc |
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1 / 6 page  1 Motorola Bipolar Power Transistor Device Data Designer's™ Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area — 1 A/100 V @ 1 sec • High fT — 30 MHz Typical MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage — 1.5 V VCEX 200 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 15 25 Adc Base Current — Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25 °C PD 250 1.43 Watts W/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.7 °C/W (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ3281A/D © Motorola, Inc. 1995 MJ3281A MJ1302A * *Motorola Preferred Device NPN 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS PNP * CASE 1–07 TO–204AA (TO–3) |
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