Electronic Components Datasheet Search |
|
LM5101 Datasheet(PDF) 9 Page - National Semiconductor (TI) |
|
|
LM5101 Datasheet(HTML) 9 Page - National Semiconductor (TI) |
9 / 12 page Timing Diagram Layout Considerations The optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout. Following points are emphasized. 1. A low ESR / ESL capacitor must be connected close to the IC, and between V DD and VSS pins and between HB and HS pins to support high peak currents being drawn from VDD during turn-on of the external MOSFET. 2. To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitor must be con- nected between MOSFET drain and ground (V SS). 3. In order to avoid large negative transients on the switch node (HS) pin, the parasitic inductances in the source of top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier) must be minimized. 4. Grounging Considerations: a) The first priority in designing grounding connections is to confine the high peak currents from charging and discharging the MOSFET gate in a minimal physical area. This will decrease the loop inductance and mini- mize noise issues on the gate terminal of the MOSFET. The MOSFETs should be placed as close as possible to the gate driver. b) The second high current path includes the boot- strap capacitor, the bootstrap diode, the local ground referenced bypass capacitor and low side MOSFET body diode. The bootstrap capacitor is recharged on the cycle-by-cycle basis through the bootstrap diode from the ground referenced V DD bypass capacitor. The re- charging occurs in a short time interval and involves high peak current. Minimizing this loop length and area on the circuit board is important to ensure reliable operation. Power Dissipation Considerations The total IC power dissipation is the sum of the gate driver losses and the bootstrap diode losses. The gate driver losses are related to the switching frequency (f), output load capacitance on LO and HO (C L), and supply voltage (VDD) and can be roughly calculated as: P DGATES =2 • f • CL • VDD 2 There are some additional losses in the gate drivers due to the internal CMOS stages used to buffer the LO and HO outputs. The following plot shows the measured gate driver power dissipation versus frequency and load capacitance. At higher frequencies and load capacitance values, the power dissipation is dominated by the power losses driving the output loads and agrees well with the above equation. This plot can be used to approximate the power losses due to the gate drivers. Gate Driver Power Dissipation (LO + HO) V CC = 12V, Neglecting Diode Losses 20088805 20088804 FIGURE 3. www.national.com 9 |
Similar Part No. - LM5101 |
|
Similar Description - LM5101 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |