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LMX2306 Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2306
Description  PLLatinum™ Low Power Frequency Synthesizer for RF Personal Communications
Download  19 Pages
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2306 Datasheet(HTML) 5 Page - National Semiconductor (TI)

 
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Charge Pump Current Specification Definitions
I1 = CP sink current at V
CPo =Vp–∆V
I2 = CP sink current at V
CPo =Vp/2
I3 = CP sink current at V
CPo = ∆V
I4 = CP source current at V
CPo =Vp–∆V
I5 = CP source current at V
CPo =Vp/2
I6 = CP source current at V
CPo = ∆V
∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
CC and ground. Typical values
are between 0.5V and 1.0V
1.
ICP
o vs VCPo = Charge Pump Output Current magnitude variation vs Voltage =
[12 * { |I1| − |I3|}]/[12 * {|I1| + |I3|}] * 100% and [12 * {|I4| − |I6|}]/[12 * {|I4| + |I6|}] * 100%
2.
ICP
o-sink vs ICPo–source = Charge Pump Output Current Sink vs Source Mismatch =
[|I2| − |I5|]/[12 * {|I2| + |I5|}] * 100%
3.
ICP
o vs T = Charge Pump Output Current magnitude variation vs Temperature =
[|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100% and [|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100%
DS100127-3
www.national.com
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