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LMX2306 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2306
Description  PLLatinum™ Low Power Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2306 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC1
−0.3V to +6.5V
V
CC2
−0.3V to +6.5V
V
p
−0.3V to +6.5V
Voltage on Any Pin
with GND = 0V (V
I)
−0.3V to V
CC + 0.3V
Storage Temperature Range (T
S)
−65˚C to +150˚C
Lead Temperature (T
L)
(solder, 4 sec.)
+260˚C
Recommended Operating
Conditions
Min
Max
Units
Power Supply Voltage
V
CC1
2.3
5.5
V
V
CC2
V
CC1
V
CC1
V
V
p
V
CC
5.5
V
Operating Temperature (T
A)
−40
+85
˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended operating conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating < 2 keV and is ESD sensitive. Handling and assembly of this device
should only be done at ESD protected work stations.
Electrical Characteristics
V
CC = 3.0V, Vp = 3.0V; −40˚C < TA < 85˚C except as specified
Symbol
Parameter
Conditions
Values
Units
Min
Typ
Max
I
CC
Power Supply Current
LMX2306
V
CC = 2.3V to 5.5 V
1.7
mA
LMX2316
V
CC = 2.3V to 5.5V
2.5
mA
LMX2326
V
CC = 2.3V to 5.5V
4.0
mA
I
CC-PWDN
Powerdown Current
V
CC = 3.0V
1
µA
f
IN
RF Input Operating
Frequency
LMX2306
V
CC = 2.3V to 5.5V
25
550
MHz
LMX2316
V
CC = 2.3V to 5.5V
0.1
1.2
GHz
LMX2326
V
CC = 2.3V to 5.5V
0.1
2.1
GHz
V
CC = 2.6V to 5.5V
0.1
2.8
GHz
f
osc
Maximum Oscillator Frequency
5
40
MHz
f
φ
Maximum Phase Detector Frequency
10
MHz
Pf
IN
RF Input Sensitivity
V
CC = 3.0V
−15
+0
dBm
V
CC = 5.0V
−10
+0
dBm
V
CC =2.3V to 5.5V
−10
+0
dBm
P
osc
Oscillator Sensitivity
OSC
IN
−5
dBm
V
IH
High-Level Input Voltage
(Note 4)
0.8 x V
CC
V
V
IL
Low-Level Input Voltage
(Note 4)
0.2 x
V
CC
V
I
IH
High-Level Input Current
V
IH =VCC = 5.5V (Note 4)
−1.0
1.0
µA
I
IL
Low-Level Input Current
V
IL = 0V, VCC = 5.5V
(Note 4)
−1.0
1.0
µA
I
IH
Oscillator Input Current
V
IH =VCC = 5.5V
100
µA
I
IL
Oscillator Input Current
V
IL = 0V, VCC = 5.5V
−100
µA
ICP
o-source
Charge Pump Output Current
V
Do =Vp/2, ICPo = LOW
(Note 3)
−250
µA
ICP
o-sink
V
Do =Vp/2, ICPo = LOW
(Note 3)
250
µA
ICP
o-source
V
Do =Vp/2, ICPo = HIGH
(Note 3)
−1.0
mA
ICP
o-sink
V
CPo =Vp/2, ICPo = HIGH
(Note 3)
1.0
mA
ICP
o-Tri
Charge Pump TRI-STATE Current
0.5
≤ V
CPo ≤ Vp − 0.5
−1.0
1.0
nA
−40˚C < T
A < 85˚C
ICP
o-sink vs
CP Sink vs Source Mismatch
V
CPo =Vp/2
5
%
ICP
o-source
T
A = 25˚C
www.national.com
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