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LMX1602SLB Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMX1602SLB Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 14 page Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Value Parameter Symbol Min Typical Max Unit V CCMAIN −0.3 6.5 V Power Supply Voltage V CCAUX −0.3 6.5 V Voltage on any pin with GND=0V V I −0.3 V CC + 0.3 V Storage Temperature Range T S −65 +150 ˚C Lead Temp. (solder 4 sec) T L +260 ˚C ESD-Human Body Model (Note 2) 2000 eV Recommended Operating Conditions Value Parameter Symbol Min Typical Max Unit V CCMAIN 2.7 3.6 V Power Supply Voltage V CCAUX V CCMAIN V CCMAIN V Operating Temperature T A −40 +85 ˚C Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. Electrical Characteristics document specific minimum and/or maxi- mum performance values at specified test conditions and are guaranteed. Typical values are for informational purposes only - based on design parameters or device characterization and are not guaranteed. Note 2: This device is a high performance RF integrated circuit and is ESD sensitive. Handling and assembly of this device should only be done on ESD-free work- stations. Electrical Characteristics (V CCMAIN =VCCAUX = 3.0V; TA = 25˚C except as specified) Symbol Parameter Conditions Min Typ Max Units GENERAL I CC Power Supply Current 2 GHz + 500 MHz Crystal Mode (Note 3) 5.0 mA 1.1 GHz + 500 MHz Crystal Mode (Note 3) 4.0 mA 1.1 GHz + 1.1 GHz Crystal Mode (Note 3) 5.0 mA 2 GHz Only Crystal Mode (Note 3) 3.5 mA 1.1 GHz Only Crystal Mode (Note 3) 2.5 mA 500 MHz Only Crystal Mode (Note 3) 1.5 mA I CC-PWDN Power Down Current EN MAIN = LOW, ENAUX = LOW 1 µA fin fin Operating Frequency fin Main 2 GHz Option 200 2000 MHz fin Main and Aux 1.1 GHz Option 100 1100 MHz fin Aux 500 MHz Option 40 500 MHz OSC IN Oscillator Operating Frequency Logic Mode (Note 3) 1 40 MHz Crystal Mode (Note 3) 1 20 MHz V OSC Oscillator Input Sensitivity 0.5 V CC V PP f φ Maximum Phase Detector Frequency 10 MHz Pfin Main and Aux RF Input Sensitivity −15 0 dBm CHARGE PUMP ICP o-source RF Charge Pump Output Current (See Programming Description 2.4) VCPo = V CC/2, High Gain Mode −1600 µA ICP o-sink VCPo = V CC/2, High Gain Mode 1600 µA ICP o-source VCPo = V CC/2, Low Gain Mode −160 µA ICP o-sink VCPo = V CC/2, Low Gain Mode 160 µA ICP o-Tri Charge Pump TRI-STATE® Current 0.5 ≤ VCP o ≤ VCC−0.5 1 nA DIGITAL INTERFACE (DATA, CLK, LE, EN, FoLD) V IH High-Level Input Voltage 0.8V CC V V IL Low-Level Input Voltage 0.2V CC V 3 www.national.com |
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