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K9F1G08U0M Datasheet(PDF) 22 Page - Samsung semiconductor |
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K9F1G08U0M Datasheet(HTML) 22 Page - Samsung semiconductor |
22 / 40 page FLASH MEMORY 22 K9F1G08D0M K9F1G16Q0M K9F1G08U0M K9F1G16U0M K9F1G08Q0M K9F1G16D0M Read Operation(Intercepted by CE) CE CLE R/B WE ALE RE Busy 00h Dout N Dout N+1 Dout N+2 Row Address Column Address tWB tAR tCHZ tR tRR tRC 30h Read Operation CE CLE R/B WE ALE RE Busy 00h Col. Add1 Col. Add2 Row Add1 Dout N Dout N+1 Column Address Row Address tWB tAR tR tRC tRHZ tRR Dout M tWC Row Add2 30h tCLR I/Ox I/Ox Col. Add1 Col. Add2 Row Add1 Row Add2 tOH tOH |
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