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IRF8910 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF8910
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF8910 Datasheet(HTML) 2 Page - International Rectifier

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IRF8910
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.015
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
10.7
13.4
m
–––
14.6
18.3
VGS(th)
Gate Threshold Voltage
1.65
–––
2.55
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-4.8
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
24
–––
–––
S
Qg
Total Gate Charge
–––
7.4
11
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.4
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.80
–––
nC
Qgd
Gate-to-Drain Charge
–––
2.5
–––
Qgodr
Gate Charge Overdrive
–––
1.7
–––
See Fig. 6
Qsw
Switch Charge (Qgs2 + Qgd)
–––
3.3
–––
Qoss
Output Charge
–––
4.4
–––
nC
td(on)
Turn-On Delay Time
–––
6.2
–––
tr
Rise Time
–––10–––
ns
td(off)
Turn-Off Delay Time
–––
9.7
–––
tf
Fall Time
–––
4.1
–––
Ciss
Input Capacitance
–––
960
–––
Coss
Output Capacitance
–––
300
–––
pF
Crss
Reverse Transfer Capacitance
–––
160
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.5
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
82
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
17
26
ns
Qrr
Reverse Recovery Charge
–––
6.5
9.7
nC
–––
ID = 8.2A
VGS = 0V
VDS = 10V
VGS = 4.5V, ID = 8.0A
e
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 250µA
Clamped Inductive Load
VDS = 10V, ID = 8.2A
VDS = 16V, VGS = 0V, TJ = 125°C
TJ = 25°C, IF = 8.2A, VDD = 10V
di/dt = 100A/µs
e
TJ = 25°C, IS = 8.2A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 10V, VGS = 0V
VDD = 10V, VGS = 4.5V
ID = 8.2A
VDS = 10V
VGS = 20V
VGS = -20V
VDS = 16V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A e
Conditions
Max.
19
8.2
ƒ = 1.0MHz


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