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BA783S Datasheet(PDF) 2 Page - Vishay Siliconix |
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BA783S Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page BA782S, BA783S www.vishay.com Vishay Semiconductors Rev. 1.7, 25-Feb-13 2 Document Number: 85709 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Diode Capacitance Fig. 2 - Dynamic Forward Resistance vs. Forward Current PACKAGE DIMENSIONS in millimeters (inches): SOD-323 T j = 25 °C f = 1 MHz 18798 110 0.1 0.8 0.6 0.4 1.4 1.2 1.0 0.2 0 100 VR - Reverse Voltage (V) 2.0 1.8 1.6 1 10 0.1 1 100 10 20330 IF - Forward Current (mA) BA782S 100 MHz BA783S 100 MHz BA782S, BA783S 1 kHz T amb = 25 °C Foot print recommendation: Rev. 5 - Date: 23.Sept.2009 17443 Document no.:S8-V-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) Cathode bar 2.50 (0.098) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) Created - Date: 24.August.2004 0.40 (0.016) 0.25 (0.010) |
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