Electronic Components Datasheet Search |
|
BA782-G Datasheet(PDF) 1 Page - Vishay Siliconix |
|
BA782-G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page BA782-G, BA783-G www.vishay.com Vishay Semiconductors Rev. 1.1, 14-May-14 1 Document Number: 85240 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Band Switching Diodes MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode switches • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION For electric bandswitching in radio and TV tuners in the frequency range of (50 to 1000) MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. PARTS TABLE PART ORDERING CODE TYPE MARKING REMARKS BA782-G BA782-G3-08 or BA782-G3-18 R4 Tape and reel BA782-HG3-08 or BA782-HG3-18 BA783-G BA783-G3-08 or BA783-G3-18 R5 Tape and reel BA783-HG3-08 or BA783-HG3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Reverse voltage VR 35 V Forward continuous current IF 100 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature Tj 125 °C Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Top - 55 to + 125 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1000 mV Reverse current VR = 20 V IR 50 nA Diode capacitance f = 1 MHz, VR = 1 V CD1 1.5 pF f = 1 MHz, VR = 3 V BA782-G CD2 1.25 pF BA783-G CD2 1.2 pF Dynamic forward resistance f = (50 to 1000) MHz, IF = 3 mA BA782-G rf1 0.7 BA783-G rf1 1.2 f = (50 to 1000) MHz, IF = 10 mA BA782-G rf2 0.5 BA783-G rf2 0.9 Series inductance across case LS 2.5 nH |
Similar Part No. - BA782-G |
|
Similar Description - BA782-G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |