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BA783 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BA783 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page BA782, BA783 www.vishay.com Vishay Semiconductors Rev. 1.5, 25-Feb-13 1 Document Number: 85708 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Band Switching Diodes MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode switches • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION For electric bandswitching in radio and TV tuners in the frequency range of (50 to 1000) MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. PARTS TABLE PART ORDERING CODE TYPE MARKING REMARKS BA782 BA782-E3-08 or BA782-E3-18 R2 Tape and reel BA782-HE3-08 or BA782-HE3-18 BA783 BA783-E3-08 or BA783-E3-18 R3 Tape and reel BA783-HE3-08 or BA783-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Reverse voltage VR 35 V Forward continuous current IF 100 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature Tj 125 °C Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Top - 55 to + 125 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1000 mV Reverse current VR = 20 V IR 50 nA Diode capacitance f = 1 MHz, VR = 1 V CD1 1.5 pF f = 1 MHz, VR = 3 V BA782 CD2 1.25 pF BA783 CD2 1.2 pF Dynamic forward resistance f = (50 to 1000) MHz, IF = 3 mA BA782 rf1 0.7 BA783 rf1 1.2 f = (50 to 1000) MHz, IF = 10 mA BA782 rf2 0.5 BA783 rf2 0.9 Series inductance across case LS 2.5 nH |
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