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BA779-G Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. BA779-G
Description  Wide frequency range 10 MHz to 1 GHz
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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BA779-G Datasheet(HTML) 1 Page - Vishay Siliconix

   
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BA779-G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 25-Feb-13
1
Document Number: 83321
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RF PIN Diodes
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
12
3
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BA779-G
BA779-HG3-08
PH1
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
30
V
Forward continuous current
IF
50
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Top
- 55 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 20 mA
VF
1V
Reverse current
VR = 30 V
IR
0.05
μA
Diode capacitance
f = 100 MHz, VR = 0 V
CD
0.5
pF
Differential forward resistance
f = 100 MHz, IF = 1.5 mA
rf
50
Reverse impedance
f = 100 MHz, VR = 0 V
BA779-G
zr
5k
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
4μs


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