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DSI35-08A Datasheet(PDF) 1 Page - IXYS Corporation |
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DSI35-08A Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2000 IXYS All rights reserved 1 - 2 V RSM V (BR)minÿ x V RRM Anode Cathode V V V on stud on stud 900 - 800 DS 35-08A DSI 35-08A 1300 - 1200 DS 35-12A DSI 35-12A 1300 1300 1200 DSA 35-12A DSAI 35-12A 1700 1750 1600 DSA 35-16A DSAI 35-16A 1900 1950 1800 DSA 35-18A DSAI 35-18A x Only for Avalanche Diodes Symbol Test Conditions Maximum Ratings I F(RMS) T VJ = T VJM 80 A I F(AVM) T case = 100°C; 180° sine 49 A P RSM DSA(I) types, T VJ = TVJM, tp = 10 ms11 kW I FSM T VJ = 45 °C; t = 10 ms (50 Hz), sine 650 A V R = 0 t = 8.3 ms (60 Hz), sine 690 A T VJ = T VJM t = 10 ms (50 Hz), sine 600 A V R = 0 t = 8.3 ms (60 Hz), sine 640 A I2t T VJ = 45 °C t = 10 ms (50 Hz), sine 2100 A2s V R = 0 t = 8.3 ms (60 Hz), sine 2000 A2s T VJ = T VJM t = 10 ms (50 Hz), sine 1800 A2s V R = 0 t = 8.3 ms (60 Hz), sine 1700 A2s T VJ -40...+180 °C T VJM 180 °C T stg -40...+180 °C M d Mounting torque 4.5-5.5 Nm 40-49 lb.in. Weight 15 g V RRM = 800-1800 V I F(RMS) = 80 A I F(AV)M = 49 A Features q International standard package, JEDEC DO-203 AB (DO-5) q Planar glassivated chips Applications q High power rectifiers q Field supply for DC motors q Power supplies Advantages q Space and weight savings q Simple mounting q Improved temperature and power cycling q Reduced protection circuits Symbol Test Conditions Characteristic Values I R T VJ = T VJM; VR = VRRM £ 4mA V F I F = 150 A; T VJ = 25°C £ 1.55 V V T0 For power-loss calculations only 0.85 V r T T VJ = T VJM 4.5 m W R thJC DC current 1.05 K/W R thJH DC current 1.25 K/W d S Creepage distance on surface 4.05 mm d A Strike distance through air 3.9 mm a Max. allowable acceleration 100 m/s2 Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DS 35 DSI 35 DSA 35 DSAI 35 Rectifier Diode Avalanche Diode A = Anode C = Cathode DO-203 AB DS DSI DSA DSAI C A A C 1/4-28UNF |
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