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NRVBM110LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NRVBM110LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V Average Rectified Forward Current (TL = 115C, RqJL = 35C/W) IO 1.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg −55 to 125 C Operating Junction Temperature TJ −55 to 125 C Voltage Rate of Change (Rated VR, TJ = 25C) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) VF TJ = 25C TJ = 100C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.280 0.365 0.415 0.175 0.275 0.325 Maximum Instantaneous Reverse Current (Note 2) IR TJ = 25C TJ = 100C mA (VR = 5.0 V) (VR = 10 V) 0.2 0.5 30 60 2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%. Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1 0.1 0.3 0.1 0.2 0.4 0.6 0.5 0.7 100C TJ = 125C 75C 25C −55C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1 0.1 0.3 0.1 0.2 0.4 0.6 0.5 0.7 100C TJ = 125C 75C 25C −55C |
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