SQM35N30-97 datasheet(4/9 Pages) VISHAY

Part #	SQM35N30-97

Description	Automotive N-Channel 80 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQM60030E

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Vishay Siliconix

S15-2916-Rev. A, 14-Dec-15

4

Document Number: 67284

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Source Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area

0.6

0.9

1.2

1.5

1.8

2.1

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 10 V

0.000

0.003

0.006

0.009

0.012

0.015

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

85

88

91

94

97

100

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 10 mA

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

- 1.9

- 1.4

- 0.9

- 0.4

0.1

0.6

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

V

DS -Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)*

1 ms

I

DM Limited

T

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

100 ms, 1

10 s, DC

I

D Limited

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