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SQM200N04-1m8 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQM200N04-1m8 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQM40010EL www.vishay.com Vishay Siliconix S15-2917-Rev. A, 14-Dec-15 1 Document Number: 69430 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.0016 RDS(on) () at VGS = 4.5 V 0.0019 ID (A) 120 Configuration Single D G S N-Channel MOSFET TO-263 Top View G D S G D S ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM40010EL-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C ID 120 A TC = 125 °C 120 Continuous Source Current (Diode Conduction) a IS 120 Pulsed Drain Current b IDM 300 Single Pulse Avalanche Current L = 0.1 mH IAS 80 Single Pulse Avalanche Energy EAS 320 mJ Maximum Power Dissipation b TC = 25 °C PD 375 W TC = 125 °C 125 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.4 |
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