SQJA02EP datasheet(2/7 Pages) VISHAY

Part #	SQJA02EP

Description	Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQJA02EP

www.vishay.com

Vishay Siliconix

S16-1946-Rev. A, 26-Sep-16

2

Document Number: 75108

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.



SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

60

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.5

3.0

3.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 60 V

-

1

μA

VGS = 0 V

VDS = 60 V, TJ = 125 °C

-

50

VGS = 0 V

VDS = 60 V, TJ = 175 °C

-

250

On-State Drain Current a

ID(on)

VGS = 10 V

VDS  5 V

30

-

A

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 10 A

-

0.0040

0.0048



VGS = 10 V

ID = 10 A, TJ = 125 °C

-

0.0074

VGS = 10 V

ID = 10 A, TJ = 175 °C

-

0.0090

Forward Transconductance b

gfs

VDS = 15 V, ID = 10 A

-

63

-

S

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

-

3550

4700

pF

Output Capacitance

Coss

-

1400

1900

Reverse Transfer Capacitance

Crss

-50

75

Total Gate Charge c

Qg

VGS = 10 V

VDS = 30 V, ID = 5 A

-51

80

nC

Gate-Source Charge c

Qgs

-16

-

Gate-Drain Charge c

Qgd

-7

-

Gate Resistance

Rg

f = 1 MHz

0.2

0.41

0.65



Turn-On Delay Time c

td(on)

VDD = 30 V, RL = 6 

ID  5 A, VGEN = 10 V, Rg = 1 

-19

35

ns

Rise Time c

tr

-5

10

Turn-Off Delay Time c

td(off)

-30

50

Fall Time c

tf

-13

25

Source-Drain Diode Ratings and Characteristics b

Pulsed Current a

ISM

--

120

A

Forward Voltage

VSD

IF = 10 A, VGS = 0

-

0.8

1.2

V

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs

-

64

130

ns

Body diode reverse recovery charge

Qrr

-

106

220

nC

Reverse recovery fall time

ta

-35

-

ns

Reverse recovery rise time

tb

-33

-

Body diode peak reverse recovery current

IRM(REC)

--3.2

-7

A

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