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SQD25N06-22L Datasheet(PDF) 4 Page - Vishay Siliconix |
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SQD25N06-22L Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page SQD19P06-60L www.vishay.com Vishay Siliconix S11-2065-Rev. C, 24-Oct-11 4 Document Number: 65158 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 0.5 0.8 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID =10A VGS =10 V 0.0 0.1 0.2 0.3 0.4 0.5 0 2468 10 TJ = 25 °C TJ = 150 °C V GS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.5 - 0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 ID =5mA ID = 250 µA T J - Temperature (°C) - 80 - 76 - 72 - 68 - 64 - 60 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) ID = 10 mA |
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