SQ3989EV datasheet(1/6 Pages) VISHAY

Part #	SQ3989EV

Description	Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

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SQ3989EV

www.vishay.com

Vishay Siliconix

S16-1694-Rev. B, 29-Aug-16

1

Document Number: 75059

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

Ordering Information:



Si3989EV-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET® power MOSFET

• AEC-Q101 qualified

• 100 % Rg and UIS tested

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

Note

a. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

VDS (V)

-30

RDS(on) () at VGS = -10 V

-0.155

RDS(on) () at VGS = -4.5 V

-0.300

ID (A)

-2.32

Configuration

Dual

Package

TSOP-6

Top View

TSOP-6 Dual

1

G

1

2

S

2

3

G

2

D

1

6

S

1

5

D

2

4

D1

G1

S1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C) a

TC = 25 °C

ID

-2.5

A

TC = 125 °C

-1.5

Pulsed Drain Current

IDM

-10.2

Continuous Source Current (Diode Conduction) a

IS

-2.1

Maximum Power Dissipation a

TC = 25 °C

PD

1.67

W

TC = 125 °C

0.56

Unclamped Inductive Surge UIS

IAV

7A

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Maximum Junction-to-Ambient a

Steady State

RthJA

150

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

90

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