SQ3419AEEV datasheet(2/12 Pages) VISHAY

Part #	SQ3419AEEV

Description	Automotive P-Channel 20 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ3425EV

www.vishay.com

Vishay Siliconix

S15-2410-Rev. A, 12-Oct-15

2

Document Number: 68215

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = -250 μA

-20

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-0.6

-1

-1.4

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = -20 V

-

-1

μA

VGS = 0 V

VDS = -20 V, TJ = 125 °C

-

-50

VGS = 0 V

VDS = -20 V, TJ = 175 °C

-

-150

On-State Drain Current a

ID(on)

VGS = -4.5 V

VDS

≤ -5 V

-15

-

A

Drain-Source On-State Resistance a

RDS(on)

VGS = -4.5 V

ID = -4.7 A

-

0.049

0.060

Ω

VGS = -4.5 V

ID = -4.7 A, TJ = 125 °C

-

0.065

-

VGS = -4.5 V

ID = -4.7 A, TJ = 175 °C

-

0.074

-

VGS = -2.5 V

ID = -1 A

-

0.089

0.100

Forward Transconductancea

gfs

VDS = -10 V, ID = -4.7 A

-

9

-

S

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = -10 V, f = 1 MHz

-

560

840

pF

Output Capacitance

Coss

-

178

267

Reverse Transfer Capacitance

Crss

-

126

190

Total Gate Charge c

Qg

VGS = -4.5 V

VDS = -10 V, ID = -4.7 A

-

6.9

10.3

nC

Gate-Source Charge c

Qgs

-1.2

-

Gate-Drain Charge c

Qgd

-2.6

-

Gate Resistance

Rg

f = 1 MHz

3

6.1

9.1

Ω

Turn-On Delay Time c

td(on)

VDD = -10 V, RL = 10

Ω

ID

≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω

-11

15

ns

Rise Time c

tr

-26

35

Turn-Off Delay Time c

td(off)

-41

55

Fall Time c

tf

-28

38

Source-Drain Diode Ratings and Characteristics b

Pulsed Current a

ISM

--

-21

A

Forward Voltage

VSD

IF = -1.7 A, VGS = 0 V

-

-0.8

-1.2

V

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