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SQ2361ES Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ2361ES Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQ2351ES www.vishay.com Vishay Siliconix S12-2312-Rev. B, 01-Oct-12 1 Document Number: 66716 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 20 V (D-S) 175 °C MOSFET FEATURES •TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) - 20 RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration Single S G D P-Channel MOSFET G TO-236 (SOT-23) S D Top View 2 3 1 SQ2351ES Marking Code: 8Sxxx ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2351ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current TC = 25 °C ID - 3.2 A TC = 125 °C - 1.8 Continuous Source Current (Diode Conduction)a IS - 2.5 Pulsed Drain Currentb IDM - 12.7 Single Pulse Avalanche Current L = 0.1 mH IAS - 6 Single Pulse Avalanche Energy EAS 1.8 mJ Maximum Power Dissipationb TC = 25 °C PD 2 W TC = 125 °C 0.67 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 175 °C/W Junction-to-Foot (Drain) RthJF 75 |
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