SQ2325ES datasheet(3/10 Pages) VISHAY

Part #	SQ2325ES

Description	Automotive P-Channel 20 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ2351ES

www.vishay.com

Vishay Siliconix

S12-2312-Rev. B, 01-Oct-12

3

Document Number: 66716

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

3

6

9

12

0

1

2

3

4

5

V

DS -Drain-to-Source Voltage (V)

V

GS = 5.0 V thru 3.5 V

V

GS = 1.5 V

V

GS = 2 V

V

GS = 2.5 V

V

GS = 3 V

0

2

4

6

8

10

0.0

0.4

0.8

1.2

1.6

2.0

2.4

I

D -Drain Current (A)

T

C = 125 °C

T

C = - 55 °C

T

C = 25 °C

Crss

0

100

200

300

400

500

0

5

10

15

20

Ciss

Coss

V

DS - Drain-to-Source Voltage (V)

0

2

4

6

8

10

0

1234

5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

V

GS - Gate-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

0.5

0

2

4

6

8

10

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

1

234

5

ID = 2.4 A

VDS =10V

Q

g - Total Gate Charge (nC)

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