SQ2309ES datasheet(1/11 Pages) VISHAY

Part #	SQ2309ES

Description	Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQ2362ES

www.vishay.com

Vishay Siliconix

S15-1820-Rev. A, 10-Aug-15

1

Document Number: 62913

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

Marking Code: 8Z

FEATURES

• TrenchFET® power MOSFET

• AEC-Q101 qualified

• 100 % Rg and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. When mounted on 1" square PCB (FR4 material).

PRODUCT SUMMARY

VDS (V)

60

RDS(on) (

Ω) at VGS = 10 V

0.068

RDS(on) (

Ω) at VGS = 4.5 V

0.075

ID (A)

4.3

Configuration

Single

Package

SOT-23

D

G

S

N-Channel MOSFET

Top View

SOT-23 (TO-236)

1

G

2

S

D

3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

4.3

A

TC = 125 °C

2.5

Continuous Source Current (Diode Conduction)

IS

3.8

Pulsed Drain Current a

IDM

17

Single Pulse Avalanche Current

L = 0.1 mH

IAS

12

Single Pulse Avalanche Energy

EAS

7mJ

Maximum Power Dissipation a

TC = 25 °C

PD

3

W

TC = 125 °C

1

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mount b

RthJA

166

°C/W

Junction-to-Foot (Drain)

RthJF

50

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