SQ2337ES

www.vishay.com

Vishay Siliconix

S13-1184-Rev. B, 20-May-13

1

Document Number: 66717

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive P-Channel 80 V (D-S) 175 °C MOSFET

FEATURES

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

PRODUCT SUMMARY

- 80

0.290

0.314

- 2.2

S

G

D

P-Channel MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

SQ2337ES

Marking Code: 8Qxxx

ORDERING INFORMATION

Package

SOT-23

Lead (Pb)-free and Halogen-free

SQ2337ES-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 80

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 2.2

A

- 1.3

Continuous Source Current (Diode Conduction)

- 3.7

- 9

Single Pulse Avalanche Current

L = 0.1 mH

- 11

Single Pulse Avalanche Energy

6mJ

3

W

1

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

166

°C/W

Junction-to-Foot (Drain)

50