SIUD412ED datasheet(1/7 Pages) VISHAY

Part #	SIUD412ED

Description	N-Channel 12 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiUD412ED

www.vishay.com

Vishay Siliconix

S16-1563-Rev. A, 08-Aug-16

1

Document Number: 70300

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 12 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET

• Ultra small 0.8 mm x 0.6 mm outline

• Ultra thin 0.4 mm max. height

• Typical ESD protection 1500 V (HBM)

• 1.2 V rated RDS(ON)

• 100% Rg tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

•Load switch

• High speed switching

•DC/DC converters

• Battery-operated and mobile devices

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.

d. Maximum under steady state conditions is 135 °C/W.

e. Maximum under steady state conditions is 400 °C/W.

f. Package limited.

PRODUCT SUMMARY

VDS (V)

12

RDS(on) max. () at VGS = 4.5 V

0.34

RDS(on) max. () at VGS = 2.5 V

0.4

RDS(on) max. () at VGS = 1.8 V

0.55

RDS(on) max. () at VGS = 1.5 V

1.2

RDS(on) max. () at VGS = 1.2 V

2.5

Qg typ. (nC)

0.47

ID (A)

0.5 a, f

Configuration

Single

PowerPAK® 0806 Single

Top View

Bottom View

1

G

2

S

D

3

1

0.8

mm

0.6

mm

1

6m

m

0.8

mm

N-Channel MOSFET

S

D

G

ORDERING INFORMATION

Package

PowerPAK 0806

Lead (Pb)-free and halogen-free

SiUD412ED-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

12

V

Gate-source voltage

VGS

± 5

Continuous drain current (TJ = 150 °C)

TA = 25 °C

ID

0.5 a, f

A

TA = 70 °C

0.5 a, f

TA = 25 °C

0.5 b

TA = 70 °C

0.5 b

Pulsed drain current (t = 100 μs)

IDM

1.5

Continuous source-drain diode current

TA = 25 °C

IS

0.5 a, f

TA = 70 °C

0.37 b

Maximum power dissipation

TA = 25 °C

PD

1.25 a

W

TA = 70 °C

0.8 a

TA = 25 °C

0.37 b

TA = 70 °C

0.24 b

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) c

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient a, d

t

 5 s

RthJA

80

100

°C/W

Maximum junction-to-ambient b, e

t

 5 s

RthJA

265

335

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