SISS28DN datasheet(5/7 Pages) VISHAY

Part #	SISS28DN

Description	N-Channel 25 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 7 page

SiSS28DN

www.vishay.com

Vishay Siliconix

S16-1282-Rev. A, 27-Jun-16

5

Document Number: 76552

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Current Derating a

Power, Junction-to-Case

Power, Junction-to-Ambient

Note

a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

10

100

1000

10000

0

36

72

108

144

180

0

25

50

75

100

125

150

Axis Title

T

C - Case Temperature (°C)

2nd line

Package Limited

10

100

1000

10000

0

14

28

42

56

70

025

50

75

100

125

150

Axis Title

T

C - Case Temperature (°C)

2nd line

10

100

1000

10000

0

0.5

1.0

1.5

2.0

2.5

025

50

75

100

125

150

Axis Title

T

A - Ambient Temperature (°C)

2nd line

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