© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 5

1

Publication Order Number:

SS26/D

SS26T3G, NRVBSS26T3G

Surface Mount

Schottky Power Rectifier

SMB Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Mechanical Characteristics:

260

°C Max. for 10 Seconds

to Part Number

Leads are Readily Solderable

Machine Model = C

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

60

V

Average Rectified Forward Current

2.0

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Condi-

tions Halfwave, Single Phase, 60 Hz)

40

A

Storage/Operating Case Temperature

−55 to +150

°C

Operating Junction Temperature

−55 to +150

°C

Voltage Rate of Change

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Device

Package

ORDERING INFORMATION

SMB

CASE 403A

SCHOTTKY BARRIER

RECTIFIER

2.0 AMPERES

60 VOLTS

MARKING DIAGRAM

http://onsemi.com

SS26T3G

SMB

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

AYWW

SS26G

G

SS26

= Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

NRVBSS26T3G

SMB

(Pb−Free)

2500 / Tape & Reel