© Semiconductor Components Industries, LLC, 2012

July, 2012 − Rev. 1

1

Publication Order Number:

NST3904F3/D

NST3904F3T5G

NPN General Purpose

Transistor

The NST3904F3T5G device is a spin−off of our popular

SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is

designed for general purpose amplifier applications and is housed in

the SOT−1123 surface mount package. This device is ideal for

low−power surface mount applications where board space is at a

premium.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

40

Vdc

Collector−Base Voltage

60

Vdc

Emitter−Base Voltage

6.0

Vdc

Collector Current − Continuous

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Derate above 25°C

(Note 1)

290

2.3

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

(Note 1)

432

°C/W

Derate above 25°C

(Note 2)

347

2.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

(Note 2)

360

°C/W

Thermal Resistance,

Junction−to−Lead 3

(Note 2)

143

°C/W

Junction and Storage Temperature Range

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−1123

CASE 524AA

STYLE 1

1

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

Device

Package

NST3904F3T5G

SOT−1123

(Pb−Free)

8000 / Tape & Reel

2

= Device Code

M = Date Code

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2

3

1

COLLECTOR

3

1

BASE

2

EMITTER

2 M