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SIR624DP Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIR624DP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 13 page SiR624DP www.vishay.com Vishay Siliconix S16-0998-Rev. A, 23-May-16 1 Document Number: 67607 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 200 V (D-S) MOSFET Ordering Information: SiR624DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • ThunderFET® technology optimizes balance of RDS(on), Qg, Qsw, and Qoss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •Fixed telecom •DC/DC converter • Primary and secondary side switch • Synchronous rectification Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 200 0.060 at VGS = 10 V 18.6 15 nC 0.064 at VGS = 7.5 V 18 PowerPAK® SO-8 Single Top View 1 6.15 mm 5.15 mm Bottom View 4 G 3 S 2 S 1 S D 8 D 6 D 7 D 5 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 18.6 A TC = 70 °C 14.8 TA = 25 °C 5.7 b, c TA = 70 °C 4.6 b, c Pulsed Drain Current (t = 100 μs) IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 26 TA = 25 °C 4.5 b, c Single Pulse Avalanche Current L = 0.1 mH IAS 15 Single Pulse Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 52 W TC = 70 °C 33 TA = 25 °C 5 b, c TA = 70 °C 3.2 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f t 10 s RthJA 20 25 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 |
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