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SIR624DP Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SIR624DP
Description  N-Channel 200 V (D-S) MOSFET
Download  13 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIR624DP Datasheet(HTML) 1 Page - Vishay Siliconix

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SiR624DP
www.vishay.com
Vishay Siliconix
S16-0998-Rev. A, 23-May-16
1
Document Number: 67607
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 200 V (D-S) MOSFET
Ordering Information:
SiR624DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® technology optimizes balance
of RDS(on), Qg, Qsw, and Qoss
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•Fixed telecom
•DC/DC converter
• Primary and secondary side switch
• Synchronous rectification
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
ID (A) a
Qg (TYP.)
200
0.060 at VGS = 10 V
18.6
15 nC
0.064 at VGS = 7.5 V
18
PowerPAK® SO-8 Single
Top View
1
6.15
mm
5.15
mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
200
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
18.6
A
TC = 70 °C
14.8
TA = 25 °C
5.7 b, c
TA = 70 °C
4.6 b, c
Pulsed Drain Current (t = 100 μs)
IDM
50
Continuous Source-Drain Diode Current
TC = 25 °C
IS
26
TA = 25 °C
4.5 b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
15
Single Pulse Avalanche Energy
EAS
11.25
mJ
Maximum Power Dissipation
TC = 25 °C
PD
52
W
TC = 70 °C
33
TA = 25 °C
5 b, c
TA = 70 °C
3.2 b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Soldering Recommendations (Peak temperature) d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
t
 10 s
RthJA
20
25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4


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